Ionizing Radiation Tolerance and Low—frequency Noise Degradation in UHV/CVD SiGe HBT's

IEEE Electron Device Letters

Volumn 16, Issue 8, 1995, Pages 351-353

  Babcock, Jeffrey A ^a   Cressler, John D ^a   Vempati, Lakshmi S ^a   Jaeger, Richard C ^a   Clark, Steven D ^b   Harame, David L ^c  

^a AUBURN UNIVERSITY   (United States)

^b NAVAL SURFACE WARFARE CENTER   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; RADIATION EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE; VACUUM DEPOSITED COATINGS;

GENERATION RECOMBINATION (G/R) NOISE; IONIZING RADIATION TOLERANCE; LOW FREQUENCY NOISE DEGRADATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029359320     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.400735     Document Type: Article

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