Oxygen defect center red room temperature photoluminescence from freshly etched and oxidized porous silicon

Journal of Applied Physics

Volumn 78, Issue 4, 1995, Pages 2671-2674

  Prokes, S M ^a   Carlos, W E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; CRYSTAL DEFECTS; ETCHING; HYDROGEN; OPTICAL MICROSCOPY; OXIDATION; OXYGEN; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE;

BLUE SHIFT; OPTICAL TRANSITIONS; OXYGEN HOLE CENTERS; PHOTOLUMINESCENCE INTENSITY; VACUUM ANNEALING;

POROUS SILICON;

EID: 0029358934     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360716     Document Type: Article

References (0)