Low-temperature photochromic response of phosphorus-doped bismuth silicon oxide

Journal of Applied Physics

Volumn 78, Issue 3, 1995, Pages 2010-2014

  McCullough, J S ^a   Harmon, Angela ^a   Martin, J J ^a,a,b   Harris, M T ^b   Larkin, J J ^b  

^a OKLAHOMA STATE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DOPING (ADDITIVES); LOW TEMPERATURE EFFECTS; LOW TEMPERATURE OPERATIONS; PHOSPHORUS; THERMODYNAMIC STABILITY;

BISMUTH SILICON OXIDE; COLORATION; ISOCHROMIC ANNEAL; PHOTOCHROMIC RESPONSE; PHOTOEXCITATION;

BISMUTH COMPOUNDS;

EID: 0029358885     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360176     Document Type: Article

References (0)