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Volumn 67, Issue , 1995, Pages 1125-
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Theoretical analysis of the geometries of the luminescent regions in porous silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
ASPECT RATIO;
BAND STRUCTURE;
CALCULATIONS;
ELECTRON ENERGY LOSS SPECTROSCOPY;
ENERGY GAP;
ETCHING;
GEOMETRY;
NANOSTRUCTURED MATERIALS;
PHOTOLUMINESCENCE;
POROSITY;
WIRE;
CONDUCTION BAND EDGE;
ELECTRON HOLE RECOMBINATION;
LUMINESCENCE ENERGY;
SILICON WIRES;
TIGHT BINDING METHOD;
WAVELENGTH;
POROUS SILICON;
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EID: 0029358728
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.114982 Document Type: Article |
Times cited : (11)
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References (0)
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