Correlation Between the Low-rrequency Noise Spectral Density and the Static Device Parameters of Silicon-on-Insulator MOSFET's

IEEE Transactions on Electron Devices

Volumn 42, Issue 8, 1995, Pages 1467-1472

  Simoen, E ^a   Claeys, C ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; FABRICATION; GATES (TRANSISTOR); SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE; SUBSTRATES; THIN FILMS; TRANSCONDUCTANCE;

CMOS TECHNOLOGY; NOISE SPECTRAL DENSITY; STATIC DEVICE PARAMETER;

MOSFET DEVICES;

EID: 0029358574     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.398661     Document Type: Article

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