Simulation of a Long Term Memory Device with a Full Bandstructure Monte Carlo Approach

IEEE Electron Device Letters

Volumn 16, Issue 8, 1995, Pages 360-362

  Lee, Christopher H ^a   Ravaioli, Umberto ^a   Hess, Karl ^a   Mead, Carver A ^b   Hasler, Paul ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; GATES (TRANSISTOR); HOT CARRIERS; MATHEMATICAL MODELS; MONTE CARLO METHODS;

ELECTRON DISTRIBUTION FUNCTION; ENERGY TAIL; FLOATING GATE STRUCTURE; GATE INJECTION CURRENT; HOT ELECTRONS; LONG TERM MEMORY DEVICE; PISCES IIB DRIFT DIFFUSION SOLUTION; SILICON CONDUCTION BAND EDGE;

DATA STORAGE EQUIPMENT;

EID: 0029358184     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.400738     Document Type: Article

References (9)

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2. Nonvolatile Semiconductor Memories: Technology, Design, and Application, C. Hu, Ed. New York: IEEE Press, 1991.
3. C. A. Mead, Analog VLSI and Neural Systems. Reading, MA: Addison- Wesley, 1989.
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6. Monte Carlo Device Simulation: Full Band And Beyond K. Hess, Ed. Norwell, MA: Kluwer, 1991.
7. P. D. Yoder, J. M. Higman, J. Bude, and K. Hess, “Monte Carlo simulation of hot electron transport in Si using a unified pseudopo tential description of the crystal,” Semicond. Sci. Technol. vol. 7, pp. B357-B359, 1992.
8. M. R. Pinto, C. S. Rafferty, H. R. Yeager. and R. W. Dutton, “PISCES-IIB,” Stanford University, Stanford, CA, Stanford Electron. Lab. Tech. Rep., 1985.
9. T. H. Ning, “Hot-electron emission from silicon into silicon dioxide,” Solid-State Electron., vol. 21, pp. 273–282, 1978.