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Solid State Communications

Volumn 95, Issue 7, 1995, Pages 429-433

Photoluminescence and electroluminescence in partially oxidized porous silicon

(3) Tsybeskov, L a Duttagupta, S P a Fauchet, P M b

a UNIVERSITY OF ROCHESTER (United States)

b UNIVERSITY OF ROCHESTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CALCULATIONS; CRYSTALLINE MATERIALS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; GOLD; PHOTOLUMINESCENCE; THERMAL EFFECTS;

ELECTROCHEMICAL ETCHING; EXPONENTIAL LAW; PARTIALLY OXIDIZED POROUS SILICON; RADIATIVE RECOMBINATION;

POROUS SILICON;

EID: 0029357693 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1098(95)00294-4 Document Type: Article

Times cited : (49)

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