Information on compositional depth profiles conveyed by angle‐resolved XPS

Surface and Interface Analysis

Volumn 23, Issue 9, 1995, Pages 589-600

  Seelmann Eggebert M ^a   Keller, Robert C ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; INTERFACES (MATERIALS); LAPLACE TRANSFORMS; MEASUREMENT ERRORS; STATISTICAL METHODS; X RAY PHOTOELECTRON SPECTROSCOPY;

COMPOSITIONAL DEPTH PROFILES; ELECTRON ESCAPE; EXPERIMENTAL ERRORS; RESORVABLE DEPTH ZONES;

COMPOSITION;

EID: 0029357227     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.740230904     Document Type: Article

References (18)

1. Estimating Solutions of First Kind Integral Equations with Nonnegative Constraints and Optimal Smoothing
2. Deconvolution of concentration depth profiles from angle resolved x-ray photoelectron spectroscopy data
3. Theoretical aspects for depth profiling by ARXPS
4. Depth-compositional analyses (angle-resolved x-ray photoelectron spectroscopy) of degradations on etched mercury cadmium telluride
5. Effect of cleanings on the composition of HgCdTe surfaces
6. Determination of concentration depth-profiles by angle-dependent XPS and AES data
7. Photoemission spectroscopic techniques to assess physical and chemical properties of mercury cadmium telluride
8. A case study for XPD in the presence of a compositional depth profile: interface formation between metals (Ag, Al) and HgCdTe