High-accuracy x-ray reflectivity study of native oxide formed in chemical treatment

Japanese Journal of Applied Physics

Volumn 34, Issue 8, 1995, Pages L1013-L1016

  Awaji, Naoki ^a   Sugita, Yoshihiro ^a   Ohkubo, Satosi ^a   Nakanishi, Toshiro ^a   Takasaki, Kanetake ^a   Komiya, Satoshi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Film density; Interface roughness; Native oxide; Surface roughness; Synchrotron radiation; Wet chemical cleaning; X ray reflectivity

Indexed keywords

CHARACTERIZATION; CHEMICAL CLEANING; DENSITY (SPECIFIC GRAVITY); ETCHING; FILMS; INTERFACES (MATERIALS); REFLECTION; SILICON WAFERS; SOLUTIONS; SURFACE ROUGHNESS; SYNCHROTRON RADIATION;

CHEMICAL TREATMENT; FILM DENSITY; INTERFACE ROUGHNESS; NATIVE OXIDE; THERMAL OXIDES; WET CHEMICAL CLEANING; X-RAY REFLECTIVITY;

OXIDES;

EID: 0029352428     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.L1013     Document Type: Article

References (18)

1. S. Ohkubo, Y. T amura, R. Sugino, T. Nakanishi, Y. Sugita, N. Awaji and K. Takasaki: Proc. 1995 Symp. VLSI Technol. Jpn. (1995).
2. N. Awaji: In preparation for publication in Jpn. J. Appi. Phys.
3. J. Takano, K. Makihara and T. Ohmi: Mater. Res. Soc. Symp. Proc. 315 (1993) 381.
4. J. R. Vig: J. Vac. Sci. & Technol. A 3 (1985) 1027.
5. T. Nakanishi, Y. Sato, M. Okuno and K. Takasaki: Symp. VLSI Tech. Dig. of Papers, Jpn. (1994) 45.
6. Y. Horii, H. Tomita and S. Komiya: Rev. Sci. Instrum. 66 (1995) 1370.
7. S. M. Heald, J. K. D. Jayanetti, A. A. Bright and G. W. Rubloff: J. Vac. Sci. & Technol. A 8 (1990) 2046.
8. L. G. Parratt: Phys. Rev. 95 (1954) 359.
9. B. Vidal and P. Vincent: Appi. Opt. 23 (1984) 1794.
10. L. Nevot and P. Croce: Rev. Phys. Appi. 15 (1980) 761.
11. S. K. Sinha, E. B. Sirota and S. Garoff: Phys. Rev. B 38 (1988) 2297.
12. B. L. Henke, J. C. Davis, E. M. Gullikson and R. C. C. Perera: Lawrence Berkeley Lab. Rep. LBL-26259 (1988).
13. S. Sasaki: KEK Report 88-14, February (1989).
14. H. Ogawa and T. Hattori: IEICE Trans Electron. E75-C (1992) 774.
15. M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami and M. Ohwada: J. Appi. Phys. 68 (1990) 1272.
16. Y. Sugita, N. Awaji, S. Ohkubo, S. Watanabe, S. Komiya and T. Ito: Ext. Abstr. Int. Conf. 1995 Solid State Devices & Materials, Japan.
17. T. Aoyama, T. Yamazaki and T. Ito: Appi. Phys. Lett. 61 (1992) 102.
18. R. Sugino, Y. Nara, H. Horie and T. Ito: J. Appi. Phys. 76 (1994) 5498.