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Volumn 34, Issue 8, 1995, Pages 4384-4386

Novel ingaas/gaas quantum dot structures formed in tetrahedral-shaped recesses on (lll)b gaas substrate using metalorganic vapor phase epitaxy

(4) Sugiyama, Yoshihiro a Sakuma, Yoshiki a Muto, Shunichi b Yokoyama, Naoki a

a FUJITSU LABORATORIES LTD (Japan)

b HOKKAIDO UNIVERSITY (Japan)

Author keywords

(lll)B; Anisotropic etching; Cathodoluminescence; InGaAs GaAs; Photoluminescence; Quantum dot

Indexed keywords

ANISOTROPY; CATHODOLUMINESCENCE; ETCHING; HETEROJUNCTIONS; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

ANISOTROPIC ETCHING; POTENTIAL ENERGY; SILICON DIOXIDE MASKS; TETRAHEDRAL-SHAPED RECESS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0029350628 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.34.4384 Document Type: Article

Times cited : (17)

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