Uniform groove-depths in (110) Si anisotropic etching by ultrasonic waves and application to accelerometer fabrication

"Sensors and Actuators, A: Physical"

Volumn 50, Issue 1-2, 1995, Pages 93-98

  Ohwada, K ^a   Negoro, Y ^a   Konaka, Y ^a   Oguchi, T ^a  

^a MURATA MANUFACTURING CO LTD   (Japan)

Author keywords

Accelerometers; Anisotropic etching; Silicon; Ultrasonic waves

Indexed keywords

ACCELEROMETERS; AMPLIFIERS (ELECTRONIC); ANISOTROPY; CAPACITANCE; CRYSTAL ORIENTATION; ELECTRIC CONVERTERS; ELECTRODES; ETCHING; SILICON WAFERS; ULTRASONIC APPLICATIONS;

ANISOTROPIC ETCHING;

SILICON SENSORS;

EID: 0029350531     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/0924-4247(96)80090-2     Document Type: Article

References (6)

1. Vertical etching of silicon at very high aspect ratios
2. A latching accelerometer fabricated by the anisotropic etching of (110) oriented silicon wafers
3. New design of micromachined capacitive force sensor
4. Micro-opto-mechanical devices fabricated by anisotropic etching of (110) silicon
5. Ellipsometric study of orientation dependent etching of silicon in aqueous KOH
6. Etching roughness for (100) silicon surfaces in aqueous KOH