Roughness analysis of Si/SiGe heterostructures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 13, Issue 4, 1995, Pages 1608-1612

  Feenstra, R M ^a   Lutz, M A ^a   Stern, Frank ^a   Ismail, K ^a   Mooney, P M ^a   LeGoues, F K ^a   Stanis, C ^a   Chu, J O ^a   Meyerson, B S ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRON SCATTERING; ELECTRONS; FOURIER TRANSFORMS; MORPHOLOGY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SURFACE ROUGHNESS; SURFACES;

HETEROSTRUCTURES; MISFIT DISLOCATIONS; ROUGHNESS ANALYSIS;

HETEROJUNCTIONS;

EID: 0029346737     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.587865     Document Type: Article

References (22)