110-GHz GaInAs/InP double heterostructure p-i-n photodetectors

Journal of Lightwave Technology

Volumn 13, Issue 7, 1995, Pages 1490-1499

  Wey, Yih Guei ^a   Giboney, Kirk ^a   Bowers, John ^a   Rodwell, Mark ^a   Silvestre, Pierre ^a   Thiagarajan, Prabhu ^a   Robinson, Gary ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT RESONANCE; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; HETEROJUNCTIONS; MATHEMATICAL MODELS; PHOTODIODES; RESISTORS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SUPERLATTICES;

ELECTRICAL RESONANCE; FULL WIDTH AT ITS HALF MAXIMUM; HETERO-INTERFACES; PUMP PROBE ELECTROOPTIC SAMPLING; SUPERLATTICE GRADED BANDGAP LAYERS;

PHOTODETECTORS;

EID: 0029346681     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.400717     Document Type: Article

References (8)