Temperature and Electric Field Characteristics of Time-Dependent Dielectric Breakdown for Silicon Dioxide and Reoxidized-Nitrided Oxides

IEEE Transactions on Electron Devices

Volumn 42, Issue 7, 1995, Pages 1329-1332

  Cable, James ^b   Woo, Jason C S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Hughes Semiconductor Product Center ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CMOS INTEGRATED CIRCUITS; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; NITRIDES; OXIDATION; SILICA; SUBSTRATES; THERMAL EFFECTS;

ELECTRON TRAPPING; HOLE TRAPPING; RAPID THERMAL NITRIDATION (RTN); RAPID THERMAL OXIDATION (RTO); TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

ELECTRIC BREAKDOWN OF SOLIDS;

EID: 0029346384     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.391216     Document Type: Article

References (23)

1. T. Hori, H. Iwasaki, and K. Tsuji, “Electrical and physical characteristics of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing,” IEEE Trans. Electron Devices, vol. 36, pp. 340–350, 1989.
2. T. Hori, H. Iwasaki, and K. Tsuji, “Charge trapping properties of ultrathin nitrided oxides prepared by rapid thermal annealing,” IEEE Trans. Electron Devices, vol. 35, pp. 904–910, 1988.
3. Z. H. Liu, P. T. Lai, and Y. C. Cheng, “Characterization of charge trapping and high-field endurance for 15-nm thermally nitrided oxides,” IEEE Trans. Electron Devices, vol. 38, pp. 344–354, 1991.
4. Z. H. Liu, P. Nee, P. K. Ko, C. Hu, C. G. Sodini, B. J. Gross, T. P. Ma and Y. C. Cheng, “Field and temperature acceleration of time-dependent dielectric breakdown for reoxidized-nitrided and fluorinated oxides,” IEEE Electron Device Lett., vol. 13, pp. 41–43, 1992.
5. A. B. Joshi, G. O. Lo, D. K. Shih and D. L. Kwong, “Effect of rapid thermal reoxidation on the electrical properties of rapid thermally nitrided thin-gate oxides,” IEEE Trans. Electron Devices, vol. 39, pp. 883–892, 1992.
6. J. S. Cable and J. C. S. Woo, “High field mobility effects in re-oxidized nitrided oxide (ONO) transistors,” IEEE Trans. Electron Devices, vol. 39, pp. 607–613, 1992.
7. K. S. Krisch, B. J. Gross, and C. G. Sodini, “Positive-charge trapping in nitrided oxide and reoxidized nitrided oxide gate dielectrics,” J. Appl. Phys., vol. 70, pp. 2185–2194, 1991.
8. J. S. Cable, R. A. Mann and J. C. S. Woo, “Impurity barrier properties of reoxidized nitrided oxide films for use with P+,-doped polysilicon gates,” IEEE Electron Device Lett., vol. 12, pp. 128–130, 1991.
9. J. S. Cable and J. C. S. Woo, “Hot carrier induced interface state generation in submicron reoxidized nitrided oxide (ONO) transistors stressed at 77K,” IEEE Trans. Electron Devices, vol. 38, pp. 2612–2618, 1991.
10. N. C. Das, V. Nathan, S. Dacus and J. Cable, “Combined effects of hot-carrier stressing and ionizing radiation in SiO2, NO, and ONO MOSFET's,” IEEE Electron Device Lett., vol. 14, pp. 40–42, 1993.
11. J. Y.-C. Sun, Y. Taur, R. H. Dennard and S. P. Klepner, “Submicrometer-channel CMOS for low-temperature operation,” IEEE Trans. Electron Devices, vol. ED-34, pp. 19–27, 1987.
12. R. C. Longsworth and W. A. Steyert, “Technology for liquid-nitrogen-cooled computers,” IEEE Trans. Electron Devices, vol. ED-34, pp. 4–7, 1987.
13. D. J. Dimaria, E. Cartier and D. Arnold, “Impact ionization, trap creation, degradation and breakdown in silicon dioxide films on silicon,” J. Appl. Phys., vol. 73, pp. 3367–3384, 1993.
14. C. L. Huang, S. A. Grot, G. S. Gildenblat and V. Bolkhovsky, “Charge trapping and dielectric breakdown in MOS devices in 77-400K temperature range,” Solid-State Electron., vol. 32, pp. 767–775, 1989.
15. T. Brozek, B. Pesic, A. Jakubowski, and N. Stojakinovic, “Breakdown properties of thin oxides in irradiated MOS capacitors,” Microelectronics and Reliability, vol. 33, pp. 649–657, 1993.
16. R. Moazzami and C. Hu, “Projecting gate oxide reliability and optimizing reliability screen,” IEEE Trans. Electron Devices, vol. 37, pp. 1643–1650, 1990.
17. J. C. Lee, I. C. Chen and C. Hu, “Modeling and characterization of gate oxide reliability,” IEEE Trans. Electron Devices, vol. 35, pp. 2268–2278, 1988.
18. R. Moazzami, J. Lee and C. Hu, “Temperature acceleration of time-dependent dielectric breakdown,” IEEE Trans. Electron Devices, vol. 36, pp. 2462–2465, 1989.
19. I. C. Chen and C. Hu, “Accelerated testing of time-dependent breakdown of SiO2,” IEEE Electron Device Lett., vol. EDL-8, pp. 140–142, 1987.
20. I. C. Chen, S. E. Holland and C. Hu, “Electrical breakdown in thin gate and tunneling oxides,” IEEE Trans. Electron Devices, vol. 37, pp. 413–22, 1985.
21. P. Apte and K. Saraswat, “Correlation of trap generation to charge-to-breakdown (QBD): a physical-damage model of dielectric breakdown,” IEEE Trans. Electron Devices, vol. 41, pp. 1595–1607, 1994.
22. A. T. Wu, V. Murali, J. Nulman, B. Triplett, D. B. Fraser, and M. Garner, “Gate bias polarity dependence of charge trapping and time-dependent dielectric breakdown in nitrided and reoxidized oxides,” IEEE Electron Device Lett., vol. 10, pp. 443–445, 1989.
23. R. J. Krantz, J. Scarpulla, and J. S. Cable, “Total dose-induced charge buildup in nitrided-oxide MOS devices,” IEEE Trans. Nucl. Sci., vol. 38, pp. 1746–1753, 1991.