Oxygen-associated defects near Si-SiO2 interfaces in porous Si and their role in photoluminescence

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 13, Issue 4, 1995, Pages 1653-1656

  Carlos, W E ^a   Prokes, S M ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; INTERFACES (MATERIALS); OXIDATION; OXIDES; OXYGEN; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; POROUS MATERIALS; POROUS SILICON; SEMICONDUCTING SILICON; SILICA;

CRYSTALLITES; LIGHT INDUCED ELECTRON SPIN RESONANCE; THERMAL DONORS; THIN OXIDE;

CRYSTAL DEFECTS;

EID: 0029345795     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.587873     Document Type: Article

References (23)