Current-Acceleration for Rapid Time-to-Failure Determination of Bipolar Junction Transistors Under Emitter-Base Reverse-Bias Stress

IEEE Transactions on Electron Devices

Volumn 42, Issue 7, 1995, Pages 1380-1383

  Neugroschel, Arnost ^a   Sah, Chih Tang ^a   Carroll, Michael S ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION; DEGRADATION; ELECTRIC CURRENTS; FAILURE (MECHANICAL); HOT CARRIERS; SEMICONDUCTOR JUNCTIONS; STRESS ANALYSIS; VOLTAGE MEASUREMENT;

BIPOLAR JUNCTION TRANSISTOR; CURRENT ACCELERATION METHOD; DEGRADATION KINETICS; EMITTER BASE REVERSE BIAS STRESS; OPERATING LIFE EXTRAPOLATION; PUNCH THROUGH CURRENT; TIME TO FAILURE MEASUREMENT;

BIPOLAR TRANSISTORS;

EID: 0029345609     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.391226     Document Type: Article

References (9)

1. D. D. Tang and E. Hackbarth, “Junction degradation in bipolar transistors and the reliability imposed constraints to scaling and design,” IEEE Trans. Electron Devices, vol. 35, pp. 2101–2107, Dec. 1988.
2. E. Hackbarth and D. D. Tang, “Inherent and stress-induced leakage in heavily-doped silicon junctions,” IEEE Trans. Electron Devices, vol. 35, pp. 2108–2118, Dec. 1988.
3. J. D. Burnett and C. Hu, “Modeling hot-carrier effects in polysilicon emitter bipolar transistors,” IEEE Trans. Electron Devices, vol. 35, pp. 2238–2244, Dec. 1988.
4. C. J. Varker, D. Pettengill, W.-T. Shiau, and B. Reuss, “Hot carrier induced degradation in BiCMOS transistors,” in IEEE Proc. 30th Int. Rel. Phys. Symp., pp. 58–62, 1992.
5. C.-T. Sah, Fundamentals of Solid-State Electronics, Study Guide, Appendix B2. Singapore: World Scientific, Dec. 1993. See Figs. B2.1 and B2.2 on pp. 396–397 for the electronic pathways for positive and negative oxide charge buildup.
6. The basic device model and experimental data on BJT βF degradation were extensively described by A. Neugroschel and C.-T. Sah in a research report in Aug. 1992, (SRC publication C94320, Aug. 1994). The fundamental mechanisms based on earlier theoretical considerations (Lu and Sah, Aug. 1991) were described in [5] which were subsequently verified experimentally in [7].
7. Y. Lu and C.-T. Sah, “Two pathways of positive oxide-charge build-up during electron tunneling into silicon dioxide film,” J. Appl. Phys., vol. 76, pp. 4724–4727, Oct. 15, 1994.
8. M. S. Carroll, A. Neugroschel, and C.-T. Sah, “Degradation of bipolar transistor current gain by hot holes during reverse emitter-base bias stress,” SRC publication C95059, also submitted to IEEE Electron Device Lett.
9. —, “Accelerated reverse emitter-base bias stress methodologies and time-to-failure applications,” SRC publication C95060, also submitted to IEEE Electron Device Lett.