Doping-Spike PtSi Schottky Infrared Detectors with Extended Cutoff Wavelengths

IEEE Transactions on Electron Devices

Volumn 42, Issue 7, 1995, Pages 1216-1220

  Lin, T L ^a   Park, J S ^a   Gunapala, S D ^a   Jones, E W ^a   Del Castillo, H M ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; INFRARED IMAGING; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING;

CRITICAL THICKNESS; DOPING SPIKE; EXTENDED CUTOFF WAVELENGTH; TUNNELING EFFECT;

INFRARED DETECTORS;

EID: 0029345428     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.391201     Document Type: Article

References (10)

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