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Solid State Electronics

Volumn 38, Issue 7, 1995, Pages 1413-1421

Backgating effects in GaAs FETs with a channel-semi-insulating substrate boundary

(2) Sengouga, N a Jones, B K b

a UNIVERSITY OF BISKRA (Algeria)

b LANCASTER UNIVERSITY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTS; ELECTRIC SPACE CHARGE; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

BACKGATING EFFECT; HOLE TRAPS; SEMIINSULATING SUBSTRATES;

MESFET DEVICES;

EID: 0029345381 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(94)00249-F Document Type: Article

Times cited : (13)

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