Electric field dynamics at a metal-semiconductor interface probed by femtosecond optical second harmonic generation

Surface Science

Volumn 331-333, Issue PART B, 1995, Pages 1372-1376

  de Jong, W ^a   van Etteger, A F ^a   van 't Hof, C A ^a   van Hall, P J ^b   Rasing, Th ^a  

^a Research Institute for Materials   (Netherlands)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Gallium arsenide; Schottky barrier; Second Harmonic Generation; Surface electrical transport

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTROCHEMICAL ELECTRODES; INTERFACES (MATERIALS); MONTE CARLO METHODS; SCHOTTKY BARRIER DIODES; SECOND HARMONIC GENERATION; SURFACE PROPERTIES; TITANIUM DIOXIDE; TRANSPORT PROPERTIES;

ELECTRIC FIELD DYNAMICS; FEMTOSECOND OPTICAL SECOND HARMONIC GENERATION; METAL SEMICONDUCTOR INTERFACES; PULSE WIDTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029345224     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)80016-6     Document Type: Article

References (18)

1. Inhomogeneous deformation of silicon surface layers probed by second-harmonic generation in reflection
2. Study of the step structure of vicinal Si(110) surfaces using optical second harmonic generation
3. Optical second-harmonic generation as a surface probe for noncentrosymmetric media