A New Large-Signal AlGaAs/GaAs HBT Model Including Self-Heating Effects, with Corresponding Parameter-Extraction Procedure

IEEE Transactions on Microwave Theory and Techniques

Volumn 43, Issue 7, 1995, Pages 1433-1445

  Lu, Ke ^a   Perry, Philip A ^a   Brazil, Thomas J ^a  

^a UNIVERSITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC VARIABLES MEASUREMENT; MICROWAVE DEVICES; MICROWAVE POWER TRANSMISSION; RESISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

GUMMEL PLOT; PARAMETER EXTRACTION; SELF HEATING EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029344513     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.392900     Document Type: Article

References (27)

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