Effects of growth temperature on the SiO2/Si(100) interface structure

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 13, Issue 4, 1995, Pages 1626-1629

  Lu, Z H ^a   Graham, M J ^a   Tay, S P ^a   Jiang, D T ^a   Tan, K H ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; FILM GROWTH; IONS; OXIDATION; OXIDES; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON; SILICA; STRUCTURE (COMPOSITION); TEMPERATURE; THERMAL EFFECTS; VACUUM APPLICATIONS;

OXIDE GROWTH; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY;

INTERFACES (MATERIALS);

EID: 0029344378     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.587868     Document Type: Article

References (13)