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Volumn 24, Issue 7, 1995, Pages 893-901

Electronic characterization of heterojunctions by surface potential monitoring

Author keywords

GaAs; In2O3 InP; surface photovoltage; surface potential

Indexed keywords

ELECTRONIC PROPERTIES; INTERFACES (MATERIALS); SEMICONDUCTOR MATERIALS; SURFACE PROPERTIES;

EID: 0029344154     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02653338     Document Type: Article
Times cited : (24)

References (42)
  • 3
    • 84936519150 scopus 로고    scopus 로고
    • F. Capasso and G. Margaritondo, eds., Heterojunction Band Discontinuities (Amsterdam: North-Holland, 1987), and ref- erences therein.
  • 4
    • 84936519149 scopus 로고    scopus 로고
    • For a recent overview on the state of the art in this field, see the Proc. 20th Annual Conf. Physics and Chemistry of Semi- conductor Interfaces, Williamsburg (1993) (and references therein), in J. Vac. Sci. Techn. B11 (4) (1993), and especially the reviews of G. Margaritondo and H. Kroemer therein.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.