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Volumn 67, Issue , 1995, Pages 314-
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Determination of nonradiative recombination coefficients of vertical-cavity surface-emitting lasers from lateral spontaneous emission
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CURRENT DENSITY;
HYDROGEN;
ION IMPLANTATION;
LEAKAGE CURRENTS;
LIGHT EMISSION;
MOLECULAR BEAM EPITAXY;
OPTICAL VARIABLES MEASUREMENT;
PROTONS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTOR QUANTUM WELLS;
NONRADIATIVE RECOMBINATION COEFFICIENT;
THRESHOLD CURRENT DENSITY;
VERTICAL CAVITY SURFACE EMITTING LASERS;
WAVELENGTH SHIFT;
SEMICONDUCTOR LASERS;
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EID: 0029344042
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.115429 Document Type: Article |
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Times cited : (16)
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References (9)
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