Silicon interlayer based surface passivation of near-surface quantum wells

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 13, Issue 4, 1995, Pages 1794-1800

  Kodama, Satoshi ^a   Koyanagi, Satoshi ^a   Hashizume, Tamotsu ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MULTILAYERS; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SURFACE STRUCTURE; ULTRATHIN FILMS;

ALUMINUM GALLIUM ARSENIDE; SILICON INTERLAYER; SURFACE PASSIVATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029343943     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.587814     Document Type: Article

References (0)