Oxide-thickness dependence of second harmonic generation from thick thermal oxides on Si(111)

Surface Science

Volumn 331-333, Issue PART B, 1995, Pages 1367-1371

  van Hasselt, C W ^a   Mateman, E ^a   Devillers, M A C ^a   Rasing, Th ^a   Fedyanin, A A ^b   Mishina, E D ^b   Aktsipetrov, O A ^b   Jans, J C ^c  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Crystalline amorphous interfaces; Second harmonic generation; Semiconductor insulator interfaces; Silicon; Silicon oxides

Indexed keywords

AMORPHOUS MATERIALS; CRYSTALLINE MATERIALS; INTERFACES (MATERIALS); LIGHT POLARIZATION; OPTICS; OXIDES; REFLECTION; SECOND HARMONIC GENERATION; SEMICONDUCTING FILMS; SILICA;

CRYSTALLINE AMORPHOUS INTERFACES; LINEAR OPTICS; OXIDE THICKNESS EFFECTS; SEMICONDUCTOR INSULATOR INTERFACES; THICK THERMAL OXIDES;

SEMICONDUCTING SILICON;

EID: 0029343455     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)00378-9     Document Type: Article

References (19)

1. Surfaces probed by nonlinear optics
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4. Influence of surface roughness on the electrical properties of Si–SiO2 interfaces and on second-harmonic generation at these interfaces
5. Second-harmonic generation from thick thermal oxides on Si(111): the influence of multiple reflections
6. Angular dependence of optical second-harmonic generation at a Ge(111) surface
7. Chemically Modified Second Harmonic Generation at Surfaces on Vicinal Si(111) Wafers