Magneto-Impedance Element

IEEE Transactions on Magnetics

Volumn 31, Issue 4, 1995, Pages 2455-2460

  Mohri, K ^a   Bushida, K ^b   Noda, M ^b   Yoshida, H ^b   Panina, L V ^b   Uchiyama, T ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; FERROMAGNETIC MATERIALS; FIELD EFFECT TRANSISTORS; MAGNETIC ANISOTROPY; MAGNETORESISTANCE; MAGNETS; SENSORS; SKIN EFFECT; THIN FILM DEVICES; WIRE;

AMORPHOUS MAGNETIC WIRE; FERROMAGNETIC WIRE; GIANT MAGNETORESISTANCE EFFECT; HIGH CIRCUMFERENTIAL ANISOTROPY; HIGH FREQUENCY CURRENT; MAGNETOIMPEDANCE ELEMENT; ROTARY ENCODER MAGNET; SENSITIVE FLUX DETECTION ELEMENT;

ELECTRIC IMPEDANCE;

EID: 0029343403     PISSN: 00189464     EISSN: 19410069     Source Type: Journal    
DOI: 10.1109/20.390157     Document Type: Article

References (15)

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