A novel surface reconstruction: subsurface interstitials stabilize Si(113)3 × 2

Surface Science

Volumn 331-333, Issue PART B, 1995, Pages 1022-1027

  Dabrowski J ^a   Mussig H J ^a   Wolff, G ^a  

^a IHP   (Germany)

Author keywords

Density functional calculations; Low index single crystal surfaces; Scanning tunneling microscopy; Silicon; Surface energy; Surface relaxation and reconstruction

Indexed keywords

CALCULATIONS; EPITAXIAL GROWTH; INTERFACIAL ENERGY; MATHEMATICAL MODELS; OPTIMIZATION; PHASE TRANSITIONS; PROBABILITY DENSITY FUNCTION; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SILICON; SINGLE CRYSTALS; SUBSTRATES;

HETEROEPITAXY; LOW INDEX SINGLE CRYSTAL SURFACES; SUBSURFACE INTERSTITIAL; SURFACE RECONSTRUCTION; SURFACE RELAXATION;

SURFACES;

EID: 0029343108     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)00168-9     Document Type: Article

References (23)

1. Simultaneous calculation of the equilibrium atomic structure and its electronic ground state using density-functional theory
2. Calculation of the surface stress anisotropy for the buckled Si(001)(1×2) and p(2×2) surfaces
3. Atomic structure and energy of the {113} planar interstitial defects in Si