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Volumn 67, Issue , 1995, Pages 332-
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InAsSb/InAlAsSb strained quantum-well diode lasers emitting at 3.9 μm
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
MOLECULAR BEAM EPITAXY;
OPTICAL MICROSCOPY;
PERFORMANCE;
QUANTUM EFFICIENCY;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR QUANTUM WELLS;
STRAIN;
THERMAL EFFECTS;
AUGER RECOMBINATION;
CONDUCTION BAND OFFSET;
GALLIUM ANTIMONIDE;
INDIUM ARSENIC ANTIMONIDE;
OPTICAL CONFINEMENT;
THRESHOLD CURRENT DENSITY;
VALENCE BAND OFFSET;
SEMICONDUCTOR LASERS;
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EID: 0029342775
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.115435 Document Type: Article |
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Times cited : (72)
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References (13)
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