Optical tuning behavior of Al0.25 Ga0.75 As/GaAs HBT oscillators with transparent ITO emitter contacts

Microwave and Optical Technology Letters

Volumn 9, Issue 4, 1995, Pages 173-175

  Freeman, P N ^a   Karakucuk M ^a   Bhattacharya, P K ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

HBT oscillator; microwave optical interactions; optical tuning

Indexed keywords

CAPACITANCE; FREQUENCIES; HETEROJUNCTION BIPOLAR TRANSISTORS; OHMIC CONTACTS; OPTICAL PROPERTIES; RESONANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; TUNING;

FREQUENCY SHIFT; ILLUMINATION; INDIUM TIN OXIDE; LIGHT INPUT; OSCILLATION FREQUENCY; TRANSPARENT EMITTER OHMIC CONTACT;

OSCILLATORS (ELECTRONIC);

EID: 0029342475     PISSN: 08952477     EISSN: 10982760     Source Type: Journal    
DOI: 10.1002/mop.4650090402     Document Type: Article

References (8)

1. Optical Control of Frequency and Phase of GaAs MESFET Oscillator
2. 0.48 As/InP Modulation‐Doped Field‐Effect Transistor Oscillators at X and R Band
3. 48 As MODFET Oscillators
4. A Direct Optically Injection Locked 2.6 GHz HBT Oscillator
5. Preparation of Conducting and Transparent Thin Films of Tin‐Doped Indium Oxide by Magnetron Sputtering
6. Use of Transparent Indium Tin Oxide to Form a Highly Efficient 20 GHz Schottky Barrier Photodiode
7. 0.8 As Heterojunction Bipolar Transistors with Transparent Indium‐Tin‐Oxide Emitter Contacts
8. + Ion Implantation for Isolation of GaAs/AlGaAs Heterojunction Bipolar Transistors