Characterization of Group III-nitride semiconductors by high-resolution electron microscopy

Journal of Crystal Growth

Volumn 152, Issue 3, 1995, Pages 135-142

  Chandrasekhar, D ^a   Smith, David J ^a   Strite, S ^b   Lin, M E ^b   Morkoc H ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTING FILMS; SUBSTRATES;

WURTZITE PHASE;

THIN FILMS;

EID: 0029340897     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00041-0     Document Type: Article

References (21)

1. Perspective On Gallium Nitride
2. GaN, AlN, and InN: A review
3. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy
4. Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy
5. Growth of High-Resistivity Wurtzite and Zincblende Structure Single Crystal Gan by Reactive-Ion Molecular Beam Epitaxy
6. A Comparison of the Wurtzite and Zincblende Band Structures for SiC, AlN and GaN
7. Motion of Crystal/Crystal and Crystal/Amorphous Interfaces
8. Heteroepitaxy on (001) Silicon: Growth Mechanisms and Defect Formation.
9. Initial stage of aluminum nitride film growth on 6H-silicon carbide by plasma-assisted, gas-source molecular beam epitaxy