Patterning-assisted control for ordered arrangement of atomic steps on Si(111) surfaces

Japanese Journal of Applied Physics

Volumn 34, Issue 6, 1995, Pages L668-L670

  Ogino, Toshio ^a   Hlblno, Hiroki ^a   Homma, Yoshikazu ^a,b  

^a NTT Basic Research Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Atom scale control; Patterned surface; Scanning electron microscopy; Self organization; Silicon; Silicon process; Step; Wafer scale control

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; ELECTRON BEAMS; PROCESS CONTROL; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SUBLIMATION; SURFACES; VACUUM APPLICATIONS;

ATOMIC SCALE CONTROL; ATOMIC STEPS; ORDERED ARRANGEMENT; PATTERNING ASSISTED CONTROL; SELF ORGANIZATION; ULTRAHIGH VACUUM; WAFER SCALE CONTROL;

SILICON WAFERS;

EID: 0029326499     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.L668     Document Type: Article

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