Anisotropic Reactive Ion Etching of Silicon Using SF6/O2/CHF3Gas Mixtures

Journal of the Electrochemical Society

Volumn 142, Issue 6, 1995, Pages 2020-2028

  Legtenberc, Rob ^a   Jansen, Henri ^a   De Boer, Meint ^a   Elwenspoek, Miko ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ASPECT RATIO; CATHODES; FLUORINE COMPOUNDS; MIXTURES; OXYGEN; PLASMAS; SILICA; SILICON WAFERS; SULFUR COMPOUNDS; SURFACE PROPERTIES;

ION ENHANCED INHIBITOR ETCHING; RESPONSE SURFACE METHODOLOGY;

REACTIVE ION ETCHING;

EID: 0029326288     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2044234     Document Type: Article

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