A 380 ps, 9.5 mW Josephson 4-Kbit RAM Operated at a High Bit Yield

IEEE Transactions on Applied Superconductivity

Volumn 5, Issue 2, 1995, Pages 2447-2452

  Nagasawa, Shuichi ^a   Hashimoto, Yoshihito ^a   Numata, Hideaki ^a   Tahara, Shuichi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; INSULATING MATERIALS; INTEGRATED CIRCUIT LAYOUT; JOSEPHSON JUNCTION DEVICES; MAGNETIC FIELDS; MOLYBDENUM; NETWORKS (CIRCUITS); NIOBIUM; RESISTORS; SILICA; SPUTTERING;

BIAS SPUTTERING; FAIL BIT MAP; HIGH BIT YIELD; MEMORY CELLS; POWER DISSIPATION; RESISTOR COUPLED DRIVER; SENSE CIRCUIT; TRAPPED MAGNETIC FLUX;

RANDOM ACCESS STORAGE;

EID: 0029325870     PISSN: 10518223     EISSN: 15582515     Source Type: Journal    
DOI: 10.1109/77.403086     Document Type: Article

References (13)

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