Analysis of Gain in Determining T0 in 1.3 μm Semiconductor Lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 1, Issue 2, 1995, Pages 250-263

  Ackerman, David A ^a   Shtengel, Gleb E ^a   Hybertsen, Mark S ^a   Morton, Paul A ^a   Kazarinov, Rudolf F ^a   Tanbun Ek, T ^a   Logan, R A ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CHARGE CARRIERS; CURRENT DENSITY; ELECTRIC IMPEDANCE MEASUREMENT; HETEROJUNCTIONS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

BAND THEORY CALCULATION; CAPPED MESA BURIED STRUCTURE; CARRIER DENSITY; CHEMICAL POTENTIAL; DIFFERENTIAL GAIN; FABRY PEROT LASERS; TEMPERATURE DEPENDENCE; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

EID: 0029324798     PISSN: 1077260X     EISSN: 15584542     Source Type: Journal    
DOI: 10.1109/2944.401204     Document Type: Article

References (58)

1. J. I. Pankove, “Temperature dependence of emission efficiency and lasing threshold in laser diodes,” IEEE J. Quantum Electron., vol. 4, pp. 119–122, 1968.
2. A. R. Adams, M. Asada, Y. Suematsu, and S. Arai, “The temperature dependence of the efficiency and threshold current of In1-xGaxAsyP1-y lasers related to intervalence band absorption,” Jap. J. Appl. Phys., vol. 19, pp. L621–L624, 1980.
3. M. Asada, A. R. Adams, K. E. Stubkjaer, Y. Suematsu, Y. Itaya, and S. Arai, “The temperature dependence of the threshold current of GaInAsP/InP DH lasers,” IEEE J. Quantum Electron., vol. QE-17, pp. 611–619, 1981.
4. M. Asada and Y. Suematsu, “The effects of loss and nonradiative recombination of the temperature dependence of threshold current in 1.5–1.6 μm GaInAsP/InP lasers,” IEEE J. Quantum Electron., vol. QE-19, pp. 917–923, 1983.
5. M. Yano, H. Nishi, and M. Takusagawa, “Temperature characteristics of theshold current in InGaAsP/InP double heterostructure lasers,” J. Appl. Phys., vol. 51, pp. 4022–4028, 1980.
6. Y. Horikoshi and Y. Furukawa, “Temperature sensitive threshold current of InGaAsP-InP double heterostructure lasers,” Jap. J. Appl. Phys., vol. 18, pp. 809–815, 1979.
7. G. B. H. Thompson and G. D. Henshall, “Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (GaIn)(AsP)/InP D.H. Lasers,” Electron. Lett., vol. 16, pp. 42–44, 1980.
8. A. Sugimura, “Band-to-band Auger recombination in InGaAsP lasers,” Appl. Phys. Lett., vol. 39, pp. 21–23, 1981.
9. T. Uji, K. Iwamoto and R. Lang, “Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode output saturation and strong laser-threshold-current temperature sensitivity,” Appl. Phys. Lett., vol. 38, pp. 193–195, 1981.
10. N. K. Dutta and R. J. Nelson, “Temperature dependence of the lasing characteristics of the 1.3 μm InGaAsP-InP and Ga-As-A10.36Ga0.64As DH lasers,” IEEE J. Quantum Electron., vol. 18, pp. 871–878, 1982.
11. N. K. Dutta and R. J. Nelson, “The case for Auger recombination in In1-xGaxAsyP1-y,” J. Appl. Phys., vol. 53, pp. 74–92, 1982.
12. A. Mozer, K. M. Romanek, O. Hildebrand, W. Schmid, and M. H. Pilkuhn, “Losses in GaInAs(P)/InP and GaAlSb(As)/GaSb lasers—The influence of the split-off valence band,” IEEE J. Quantum Electron., vol. QE-19, pp. 913–916, 1983.
13. A. P. Mozer, S. Hausser, and M. H. Pilkuhn, “Quantitative evaluation of gain and losses in quaternary lasers,” IEEE J. Quantum Electron., vol. QE-21, 719–725, 1985.
14. E. P. O'Reilly and M. Silver, “Temperature sensitivity and high temperature operation of long wavelength semiconductor lasers,” Appl. Phys. Lett., vol. 63, pp. 3318–3320, 1993.
15. M. C. Wang, K. Kash, C. E. Zah, R. Bhat, and S. L. Chuang, “Measurement of nonradiative and radiative recombination rates in strained-layer quantum-well systems,” Appl. Phys. Lett., vol. 62, pp. 166–168, 1993.
16. P.-L. Liu, J. P. Heritage, and O. E. Martinez, “Temperature dependence of the threshold current of an InGaAsP laser under 130-ps electrical pulse pumping,” Appl. Phys. Lett., vol. 44, pp. 370–372, 1983.
17. N. K. Dutta and N. A. Olsson, “Temperature dependence of threshold current of injection lasers for short pulse excitation,” Appl. Phys. Lett., vol. 44, pp. 943–944, 1984.
18. Y. Zou, J. S. Osinski, P. Grodzinski, P. D. Dapkus, W. C. Rideout, W. F. Sharfin, J. Schlafer, and F. D. Crawford, “Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 μm compressively strained semiconductor lasers,” IEEE J. Quantum Electron., vol. 29, pp. 1565–1575, 1993.
19. D. A. Ackerman, P. A. Morton, R. F. Kazarinov, T. Tanbun-Ek, and R. A. Logan, “Analysis of T0 in 1.3 μm multi-quantum well and bulk active lasers,” in Proc. InP and Related Materials Conf., Santa Barbara, CA, 1994, pp. 466–468.
20. D. A. Ackerman, P. A. Morton, G. E. Shtengel, M. S. Hybertsen, R. F. Kazarinov, T. Tanbun-Ek, and R. A. Logan, “Analysis of T0 in 1.3 μm multi-quantum-well and bulk active lasers,” Appl. Phys. Lett., accepted for publication.
21. R. F. Nabiev, E. C. Vail, C. J. Chang-Hasnian, and W.-P. Yuen, “Temperature behavior of 980 nm Al-free single and triple-strained quantum well lasers,” in Conf. Lasers and Electro-Opt., Tech. Dig., Anaheim, CA, 1994, p. 27.
22. J. L. Zilko, L. J. P. Ketelsen, Y. Twu, D. P. Wilt, S. G. Napholtz, I. P. Blaha, K. E. Strege, V. G. Riggs, D. L. Vanharen, S. Y. Leung, P. M. Nitzsche, J. A. Long, G. Przyblek, J. Lopata, M. W. Focht, and L. A. Koszi, “Growth and characterization of high yield, reliable, high-power, high-speed InP/InGaAsP capped mesa buried heterostructure distributed feedback lasers,” IEEE J. Quantum Electron., vol. 25, pp. 2091–2095, 1989.
23. R. F. Kazrinov and M. R. Pinto, “Carrier transport in laser heterostructures,” IEEE J. Quantum Electron., vol. 30, pp. 49–53, 1991.
24. B. W. Haaki and T. L. Paoli, “Gain spectra in GaAs double-heterostructure injection lasers,” J. Appl. Phys., vol. 46, pp. 1299–1306, 1975 (and reference 1 cited therein).
25. D. T. Cassidy, “Technique for measurement of the gain spectra of semiconductor laser diodes,” J. Appl. Phys., vol. 56, pp. 3096–3099, 1984.
26. P. A. Andrekson, N. A. Olsson, T. Tanbun-Ek, R. A. Logan, D. L. Coblentz, and H. Temkin, “Novel technique for determining internal loss of individual semiconductor lasers,” Electron. Lett., vol. 28, pp. 171–172, 1992.
27. G. E. Shtengel and D. A. Ackerman, “Internal optical loss measurements in 1.3 μm InGaAsP lasers,” Electron. Lett., submitted.
28. C. H. Henry, R. A. Logan, F. R. Merritt, and J. P. Luongo, “The effect of intervalence band absorption on the thermal behavior of InGaAsP lasers,” IEEE J. Quantum Electron., vol. QE-19, pp. 947–952, 1983.
29. R. Olshansky, J. LaCourse, T. Chow, and W. Powazinik, “Measurement of radiative, Auger and nonradiative currents in 1.3 μm InGaAsP buried heterostructure lasers,” Appl. Phys. Lett., vol. 50, pp. 310–312, 1987.
30. G. E. Shtengel, D. A. Ackerman, P. A. Morton, E. I. Flynn, and M. S. Hybertsen, “Independance-corrected carrier lifetime measurements in semiconductor lasers,” Appl. Phys. Lett., submitted.
31. G. H. B. Thompson, “Analysis of radiative and nonradiative recombination in lightly doped InGaAsP lasers,” Electron. Lett., vol. 19, pp. 154–155, 1983.
32. A. Ghiti, M. Silver, and E. P. O'Reilly, “Low threshold current and high differential gain in ideal tensile- and compressive-strained quantum-well lasers,” J. Appl. Phys., vol. 71, pp. 4626–4628, 1992.
33. W. W. Lui, T. Yamanaka, Y. Yoshikuni, S. Seki, and K. Yokoyama, “Unifying explanation for recent temperature sensitivity measurements of Auger recombination effects in strained InGaAs/InGaAsP quantum-well lasers,” Appl. Phys. Lett., vol. 63, pp. 1616–1618, 1993.
34. G. Fuchs, C. Schiedel, A. Hangleiter, V. Harle, and F. Schotz, “Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum-well lasers,” Appl. Phys. Lett., vol. 62, pp. 396–398, 1993.
35. J. Heinen, H. Albrecht, and C. Weyrich, “Determination of the recombination coefficients in undoped (In, Ga)(As, P) from transient optical analysis of (In, Ga)(As, P)-InP double heterostructure LED's, J. Appl. Phys., vol. 53, pp. 1800–1803, 1982.
36. C. H. Henry, R. A. Logan, and F. R. Merritt, “Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers,” J. Appl. Phys., vol. 51, pp. 3042–3050, 1980.
37. H. Haug and S. Schmitt-Rink, “Electron theory of the optical properties of laser-excited semiconductors,” Proc. Quantum Electron., vol. 9, pp. 3–100, 1984.
38. M. G. A. Bernard and G. Duraffourg, “Laser conditions in semiconductors,” Phys. Status Sotidi, vol. 1, pp. 699–703, 1961.
39. H. Temkin, V. G. Keramidas, M. A. Pollack, and W. R. Wagner, “Temperature dependence of photoluminescence of n-InGaAsP,” J. Appl. Phys., vol. 52, pp. 1574–1578, 1981.
40. W. B. loyce and R. W. Dixon, “Analytic approximations for the Fermi energy of an ideal Fermi gas,” Appl. Phys. Lett., vol. 31, 354–356, 1977.
41. D. Gershoni, C. H. Henry, and G. A. Baraff, “Calculating the optical properties of multidimensional heterostructures: Application to the modeling of quaternary quantum well lasers,” IEEE J. Quantum Electron., vol. QE-29, pp. 2433–2450, 1993.
42. S. Seki and K. Yokoyama, “Strain and quantum-confinement effects on differential gain of strained InGaAsP/InP quantum well lasers,” J. Appl. Phys., vol. 74, pp. 4242–4244, 1993.
43. S. Seki, T. Yamanaka, W. Lui, Y. Yoshikuni and K. Yokoyama, “Theoretical analysis of pure effects of strain and quantum confinement on differential gain in InGaAsP/InP strained-layer quantum-well lasers,” IEEE J. Quantum Electron., vol. QE-30, pp. 500–510, 1994.
44. D. Ahn and S. L. Chuang, “The theory of strained-layer quantum-well lasers with bandgap renormalization,” IEEE J. Quantum Electron., vol. 30, pp. 350–365, 1994.
45. R. Binder, D. Scott, A. E. Paul, M. Lindberg, K. Henneberger, and S. W. Koch, “Carrier-carrier scattering and optical dephasing in highly excited semiconductors,” Phys. Rev. B, vol. 45, pp. 1107–1115, 1992.
46. P. Vashishta, S. G. Das, and K. S. Singwi, “Thermodynamics of the electron-hole liquid in Ge, Si, and GaAs,” Phys. Rev. Lett., vol. 33, pp. 911–914, 1974.
47. P. Vashishta, P. Bhattacharyya, and K. S. Singwi, “Electron-hole liquid in many-band systems. I. Ge and SI under large uniaxial strain,” Phys. Rev. B, vol. 10, pp. 5108–5126, 1974.
48. X. Zhu, M. S. Hybertsen, and P. B. Littlewood, unpublished.
49. F. Stern, “Effect of band tails on stimulated emission of light in semiconductors,” Phys. Rev., vol. 148, pp. 186–194, 1966.
50. H. C. Casey, Jr. and F. Stern, “Concentration-dependent absorption and spontaneous emission of heavily doped GaAs,” J. Appl. Phys., vol. 47, pp. 631–643, 1976.
51. S. N. G. Chu, S. Nakahara, K. E. Strege, and W. D. Johnston, Jr., “Surface layer spinodal decomposition in In1-xGaxAsyP1-y and In1-xGaxAs grown by hydride transport vapor-phase epitaxy,” J. Appl. Phys., vol. 57, pp. 4610–4615, 1985.
52. T. B. Bahder, “Eight-band k · p model of strained zinc-blende crystals,” Phys. Rev. B, vol. 41, pp. 11992–12001, 1990 and Erratum, Phys. Rev. B, vol. 46, p. 9913, 1992.
53. G. A. Baraff and D. Gershoni, “Eigenfunction-expansion method for solving the quantum-wire problem: Formulation,” Phys. Rev. B, vol. 43, pp. 4011–4022, 1991.
54. P. Rochon and E. Fortin, “Photovoltaic effect and interband magneto-optical transitions in InP,” Phys. Rev. B, vol. 12, pp. 5803–5810, 1975.
55. C. G. Van de Walle, “Band lineups and deformation potentials in the model-solid theory,” Phys. Rev. B, vol. 39, pp. 1871–1883, 1989.
56. N. Binggeli and A. Baldereschi, “Determination of the hole effective masses in GaAs from acceptor spectra,” Phys. Rev. B, vol. 43, pp. 14734–14737, 1991.
57. K. Alavi and R. L. Aggrawal, “Interband magnetoabsorption of In0.53Ga0.47As,” Phys. Rev. B, vol. 21, pp. 1311–1315, 1980.
58. G. Lehmann and M. Taut, “On the numerical calculation of the density of states and related properties,” Phys. Stat. Sol. (b), vol. 54, pp. 469–477, 1972.