Minimization of Threshold Current in Short Wavelength AlGaInP Vertical-Cavity Surface-Emitting Lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 1, Issue 2, 1995, Pages 649-653

  Chow, Weng W ^a   Crawford, Mary Hagerott ^a   Schneider, Richard P ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CURRENT DENSITY; LEAKAGE CURRENTS; LIGHT ABSORPTION; OPTIMIZATION; QUANTUM ELECTRONICS; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

BANDGAP RENORMALIZATION; LEAKAGE CURRENT EFFECTS; MICROSCOPIC THEORY; SHORTER WAVELENGTH LASERS; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0029324779     PISSN: 1077260X     EISSN: 15584542     Source Type: Journal    
DOI: 10.1109/2944.401253     Document Type: Article

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