NbN/AlN/NbN tunnel junctions fabricated at ambient substrate temperature

IEEE Transactions on Applied Superconductivity

Volumn 5, Issue 2, 1995, Pages 2322-2325

  Wang, Z ^a   Kawakami, A ^a   Uzawa, Y ^a   Komiyama, B ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRON TUNNELING; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MAGNETRON SPUTTERING; NIOBIUM COMPOUNDS; SUPERCONDUCTING FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM NITRIDE; AMBIENT SUBSTRATE TEMPERATURE; NIOBIUM NITRIDE; QUASIPARTICLE CURRENT RISE; SUPERCONDUCTOR INSULATOR SUPERCONDUCTOR;

TUNNEL JUNCTIONS;

EID: 0029324290     PISSN: 10518223     EISSN: 15582515     Source Type: Journal    
DOI: 10.1109/77.403050     Document Type: Article

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