Buried oxide layers formed by low dose SIMOX processes

Microelectronic Engineering

Volumn 28, Issue 1-4, 1995, Pages 411-414

  Aspar, B ^a   Guilhalmenc, C ^a   Pudda, C ^a   Garcia, A ^a   Papon, A M ^a   Auberton Herve, A J ^b   Lamure, J M ^b  

^a CEA LETI   (France)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; OXYGEN; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; STACKING FAULTS;

BURIED OXIDE LAYERS; BURIED OXIDE THICKNESS; LOW DOSE SEPARATION BY IMPLANTATION OF OXYGEN; MICRO STACKING FAULTS; MULTI IMPLANTATION PROCESS; SILICON ISLANDS;

OXIDES;

EID: 0029324195     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00086-N     Document Type: Article

References (5)

1. 0.1- mu m-gate, ultrathin-film CMOS devices using SIMOX substrate with 80-nm-thick buried oxide layer