Theoretical Study of the Response of InGaAs Metal-Semiconductor-Metal Photodetectors

IEEE Journal of Quantum Electronics

Volumn 31, Issue 5, 1995, Pages 944-953

  Salem, Ali F ^a   Brennan, Kevin F ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; DIFFUSION; ELECTRIC CURRENTS; ELECTRONS; HETEROJUNCTIONS; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM COMPOUNDS;

DRIFT DIFFUSION MODEL; HOLE BARRIERS; INDIUM GALLIUM ARSENIDE; INDIUM PHOSPHIDE; LATTICE MATCHING; PHOTOCURRENT SIGNAL; QUASI SCHOTTKY CONTACT; THERMIONIC FIELD EMISSION; TUNNELING CURRENT; TWO DIMENSIONAL;

PHOTODETECTORS;

EID: 0029310248     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.375941     Document Type: Article

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