A Novel Offset Gated Polysilicon Thin Film Transistor Without an Additional Offset Mask

IEEE Electron Device Letters

Volumn 16, Issue 5, 1995, Pages 161-163

  Min, Byung Hyuk ^a   Park, Cheol Min ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GATES (TRANSISTOR); LEAKAGE CURRENTS; MASKS; PHOTOLITHOGRAPHY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

KINK EFFECT; POLYCRYSTALLINE SILICON;

THIN FILM TRANSISTORS;

EID: 0029309425     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.382226     Document Type: Article

References (6)

1. R. E. Proano, R. S. Misage, and D. G. Ast, “Development and electrical properties of undoped polycrystalline silicon thin film transistors,” IEEE Trans. Electron Devices, vol. 36, pp. 1915-1922, 1989.
2. H. Oshima and S. Morozumi, “Future trends for TFT integrated circuits on glass substrates,” IEDM Tech. Dig., pp. 157–160, 1989.
3. J. G. Fossum, A. Ortiz-Conde, H. Shichijo, and S. K. Banerjee, “Anomalous leakage current in LPCVD polysilicon MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-32, pp. 1878–1885, 1985.
4. S. Seki, O. Kogure, and B. Tsujiyama, “Laser-recrystallized polycrystal-line-Silicon thin-film transistors with low leakage current and high switching ratio,” IEEE Electron Device Lett., vol. EDL-8, pp. 434–436, 1987.
5. K. Tanaka, H. Arai, and S. Kohda, “Characterization of offset-structure polycrystalline-silicon thin-film transistors,” IEEE Electron Device Lett., vol. EDL-9, pp. 23–25, 1988.
6. J. P. Colinge, Silicon-on-Insulator Technology: Materials to VLSI. Kluwer Academic Publishers, 1991, pp. 139–142.