Monte Carlo Analysis of the Behavior and Spatial Origin of Electronic Noise in GaAs MESFET's

IEEE Transactions on Electron Devices

Volumn 42, Issue 5, 1995, Pages 991-998

  González, Tomás ^a   Pardo, Daniel ^a   Varani, Luca ^b,c   Reggiani, Lino ^c  

^a UNIVERSITY OF SALAMANCA   (Spain)

^b UNIVERSITÉ MONTPELLIER II   (France)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; GATES (TRANSISTOR); GEOMETRY; HOT CARRIERS; MESFET DEVICES; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

CURRENT FLUCTUATIONS; DRAIN CURRENT; ELECTRONIC NOISE; FIELD FLUCTUATIONS; VOLTAGE FLUCTUATIONS;

SPURIOUS SIGNAL NOISE;

EID: 0029309107     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.381998     Document Type: Article

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