InGaN/AIGaN blue-light-emitting diodes

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 13, Issue 3, 1995, Pages 705-710

  Nakamura, Shuji ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; INDIUM; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; TRAFFIC SIGNALS; ZINC; CURRENT DENSITY; LIGHT; LIGHT EMISSION;

ALUMINUM GALLIUM NITRIDE; BAND GAP ENERGY; BLUE LIGHT EMITTING DIODES; INDIUM GALLIUM NITRIDE; MOLE FRACTION; X RAY ROCKING CURVE;

LIGHT EMITTING DIODES;

ACTIVE LAYER; BLUE LEDS; BLUE-GREEN LED; CO-DOPING; DOUBLE HETEROSTRUCTURE; EXTERNAL QUANTUM EFFICIENCY; FORWARD CURRENTS; MOLE FRACTION; OUTPUT POWER; PEAK WAVELENGTH; TRAFFIC LIGHT;

EID: 0029308415     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.579811     Document Type: Article

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