Novel p-JFET Embedded in Silicon Radiation Detectors that Avoids Preamplifier Feedback Resistor

IEEE Electron Device Letters

Volumn 16, Issue 5, 1995, Pages 208-210

  Sampietro, M ^a   Rehak, L Fasoli P ^b   Struder, L ^c  

^a POLITECNICO DI MILANO   (Italy)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c MAX PLANCK INSTITUT FÜR PHYSIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CAPACITANCE; ELECTRIC DISCHARGES; ELECTRONS; GATES (TRANSISTOR); LEAKAGE CURRENTS; PERFORMANCE; RADIATION DETECTORS; RESISTORS; SEMICONDUCTOR DEVICE MANUFACTURE;

CHARGE COLLECTION CAPABILITY; CHARGE RESOLUTION; ELECTRON FLUX; GATE TO CHANNEL JUNCTION; PARASITIC CAPACITANCES; PIXEL ACTIVE AREA; PREAMPLIFIER FEEDBACK RESISTOR; SILICON RADIATION DETECTORS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 0029308412     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.382242     Document Type: Article

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