Si Oxyhydrides on Stain-Etched Porous Si Thin Films and Correlation with Crystallinity and Photoluminescence

Journal of the Electrochemical Society

Volumn 142, Issue 5, 1995, Pages L69-L71

  Prokes, S M ^c   Xu, J ^b  

^a UNIVERSITY OF CINCINNATI   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION PEAK; OXYHYDRIDES; STRAIN ETCHING; ULTRAVIOLET EXCITATION;

AMORPHOUS FILMS; ETCHING; FABRICATION; INFRARED TRANSMISSION; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; POROSITY; POROUS SILICON; SILICON WAFERS; THIN FILMS;

SEMICONDUCTING SILICON;

EID: 0029307857     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2048652     Document Type: Article

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