1.55-µm Polarization-Insensitive Optical Amplifier with Strain-Balanced Superlattice Active Layer

IEEE Photonics Technology Letters

Volumn 7, Issue 5, 1995, Pages 473-475

  Godefroy, A ^a   Lecorre, A L ^a   Clerot, F ^a   Salaun, S ^a   Loualiche, S ^a   Simon, J C ^a   Henry, L ^a   Vaudry, C ^a   Keromnes J C ^a   Joulie, G ^a   Lamouler, P ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN POLARIZATION INSENSITIVITY; STRAIN BALANCED SUPERLATTICE ACTIVE LAYER;

BAND STRUCTURE; BANDWIDTH; LIGHT POLARIZATION; MATHEMATICAL MODELS; OPTICAL COMMUNICATION; SEMICONDUCTOR SUPERLATTICES; STRAIN;

SEMICONDUCTOR LASERS;

EID: 0029307302     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.384514     Document Type: Article

References (8)

1. P. Doussière, P. Garabedian, C. Graver, D. Bonnevie, T. Fillion, E. Derouin, M. Monnot, J. G. Provost, D. Leclerc, and M. Klenk, “1.55 µm polarization-independent semiconductor optical amplifier with 25 dB fiber to fiber gain,” IEEE Photon. Technol. Lett., vol. 6, no. 2, pp. 170–172, 1994.
2. M. Joma, H. Horikawa, C. Q. Xu, K. Yamada, Y. Katoh, and T. Kamijoh, “Polarisation insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure,” Appl. Phys. Lett., vol. 58, no. 1, pp. 121–122, 1993.
3. M. A. Newkirk, B. I. Miller, U. Koren, M. G. Young, M. Chien, R. M. Jopson, and C. A. Burrus, “1.5 µm multiquantum-well semiconductor optical amplifier with tensile and compressively strained wells for polarization-independent gain,” IEEE Photon. Technol. Lett., vol. 4, no. 4, pp. 406-408, 1993.
4. K. Magari, M. Okamoto, and Y. Noguchi, “1.55 µm polarization-insensitive high-gain tensile-strained-barrier MQW optical amplifier,” IEEE Photon. Technol. Lett., vol. 3, no. 11, pp. 998–1000, 1993.
5. S. L. Chuang, “Efficient band-structure calculations of strained quantum wells,” Phys. Rev. B, vol. 43, p. 9649, Apr. 1991.
6. F. Clérot, H. L’Haridon, A. Le Corre, A. Godefroy, S. Salaün, and A. Ponchet, “Simulation and PL characterization of TE/TM emission of strained Ga 0.47 In 0.53 As/Ga 0.62 In 0.38 As superlattices,” J. Materials Science and Engineering, in press.
7. A. Godefroy, “Growth and characterization of strained layers superlattices for polarization insensitive optical amplifiers,” Ph. D. thesis, University of Rennes I, France, April, 1994.
8. A. Godefroy, A. Le Corre, F. Clérot, J. Caulet, A. Poudoulec, S. Salaün, and D. Lecrosnier, “In l-x Ga x As/In 0.53 Ga 0.47 As strained superlattices grown by gas source molecular beam epitaxy,” in Int. Conf. InP and Related Materials, Paris, Apr. 1993.