Dry etching and implantation characteristics of III-N alloys

Materials Science and Engineering B

Volumn 31, Issue 3, 1995, Pages 309-317

  Pearton, S J ^a   Vartuli, C B ^a   Shul, R J ^b   Zolper, J C ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

III V nitrides; Ion implantation; Photonics; Plasma etching

Indexed keywords

ANNEALING TEMPERATURE; BLUE ULTRAVIOLET EMITTER; ETCH RATE; HIGH TEMPERATURE ELECTRONICS; PHOTONICS; TERNARY ALLOYS;

ALLOYS; ANNEALING; DIFFUSION; DRY ETCHING; ION IMPLANTATION; MICROWAVES; PROTECTIVE COATINGS; TEMPERATURE; TERNARY SYSTEMS;

NITRIDES;

EID: 0029307290     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(94)01154-0     Document Type: Article

References (45)

1. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
2. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
3. Point-defect energies in the nitrides of aluminum, gallium, and indium
4. Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition
5. Schottky barrier photodetector based on Mg-doped p-type GaN films
6. High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction
7. Microwave performance of GaN MESFETs
8. Growth of III–V materials by metalorganic molecular-beam epitaxy
9. Gallium Nitride Films
10. Electrolytic Etching of GaN
11. Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy
12. InGaAsP/InP Lasers with Two Reactive-Ion-Etched Mirror Facets
13. I(t) technique for generation rate determination in implanted MOS structures
14. Thermal Annealing Effects on P-Type Mg-Doped GaN Films