Epitaxial growth of AlN thin films on silicon (111) substrates by pulsed laser deposition

Journal of Applied Physics

Volumn 77, Issue 9, 1995, Pages 4724-4728

  Vispute, R D ^a   Narayan, J ^a   Wu, Hong ^a   Jagannadham, K ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); NITROGEN; PRESSURE EFFECTS; PULSED LASER APPLICATIONS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; X RAY DIFFRACTION;

ALUMINUM NITRIDES; LASER ENERGY DENSITY; PARTIAL PRESSURE; PHYSICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; PULSED REPETITION RATE;

THIN FILMS;

EID: 0029307142     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.359441     Document Type: Article

References (0)