Characterization of the growth of sub-monolayer coverages (1/200th to 1 monolayer) of Si and Be on GaAs(001): a reflectance anisotropy spectroscopy and reflection high-energy electron diffraction study

Journal of Crystal Growth

Volumn 150, Issue 1 -4 pt 1, 1995, Pages 197-201

  Woolf, D A ^a   Rose, K C ^a   Morris, S J ^a   Westwood, D I ^a   Rumberg, J ^a   Reinhardt, F ^a   Richter, W ^a   Williams, R H ^a  

^a CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; CRYSTAL STRUCTURE; DEPOSITION; HETEROJUNCTIONS; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SPECTROSCOPY; SURFACE STRUCTURE; SURFACES;

REFLECTANCE ANISOTROPY SPECTROSCOPY; SUBMONOLAYER COVERAGES;

CRYSTAL GROWTH;

EID: 0029307016     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(94)00721-7     Document Type: Article

References (15)