Eliminating Metal-Sputter Contamination in Ion Implanter for Low-Temperature-Annealed, Low-Reverse-Bias-Current Junctions

Journal of the Electrochemical Society

Volumn 142, Issue 5, 1995, Pages 1692-1698

  Nitta, T ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURE; HIGH ENERGY ION BEAM SPUTTERING; ION IMPLANTER; LOW REVERSE BIAS CURRENT JUNCTIONS; POST IMPLANTATION ANNEALING;

ANNEALING; CONTAMINATION; CURRENT DENSITY; LEAKAGE CURRENTS; POINT DEFECTS; SEMICONDUCTOR JUNCTIONS; SILICON; SPUTTERING; TEMPERATURE;

ION IMPLANTATION;

EID: 0029305379     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2048641     Document Type: Article

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