An Analytical Deep Submicron MOS Device Model Considering Velocity Overshoot Behavior Using Energy Balance Equation

IEEE Transactions on Electron Devices

Volumn 42, Issue 5, 1995, Pages 864-869

  Sim, Jai hoon ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRIC CURRENTS; ELECTRIC FIELDS; MOS DEVICES; PERMITTIVITY; PROBLEM SOLVING; SEMICONDUCTOR DOPING;

DEEP SUBMICRON; DRAIN CURRENT; DRIFT CURRENT; DRIFT DIFFUSION EQUATION; ENERGY BALANCED EQUATION; THERMOELECTRIC CURRENTS; THERMOELECTRIC DIFFUSION;

SEMICONDUCTOR DEVICE MODELS;

EID: 0029305346     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.381981     Document Type: Article

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