Optical investigation of the self-organized growth of InAs/GaAs quantum boxes

Journal of Crystal Growth

Volumn 150, Issue , 1995, Pages 351-356

  Gerard J M ^a   Genin J B ^a   Lefebvre, J ^a   Moison, J M ^a   Lebouche N ^a   Barthe, F ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; MULTILAYERS; NUCLEATION; OPTICAL PROPERTIES; QUANTUM ELECTRONICS; QUANTUM OPTICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

ASYNCHRONOUS NUCLEATION; HIGH RESOLUTION PROBING; INDIUM ARSENIDE; QUANTUM BOXES; QUASIEQUILIBRIUM MORPHOLOGY; SELF ORGANIZED GROWTH OPTICAL INVESTIGATION; THREE DIMENSIONAL ISLANDS;

SEMICONDUCTOR GROWTH;

EID: 0029304536     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)80234-4     Document Type: Article

References (13)

1. Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates
2. Confined Electrons and Photons: New Physics and Applications
3. Microscopy of Semiconducting Materials